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A comparison among three-level ZVS-PWM isolated DC-to-DC converters

机译:三级ZVS-PWM隔离的DC到DC转换器之间的比较

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Considering that the designer of high-frequency high-input voltage power supplies does not always find semiconductors capable of sustaining the desired voltage, several topologies have been proposed based on multilevel converters in which only a fraction of the voltage is applied to each switch. This paper compares five different three-level ZVS PWM isolated DC-to-DC converter topologies. Basics concepts of each topology are shown along with their advantages and drawbacks. A comparison involving the size of reactive elements employed, stress of the semiconductors devices, number of semiconductors devices employed, simplicity and efficiency is made and summarised. Experimental results are included, in order to verify the theoretical analysis.
机译:考虑到高频高输入电压电源的设计者并不总是找到能够维持所需电压的半导体,已经基于多级转换器提出了多个拓扑,其中仅将电压的一部分施加到每个开关。本文比较了五种不同的三级ZVS PWM隔离的DC-DC转换器拓扑。每个拓扑的基础知识概念以及它们的优点和缺点。涉及所采用的反应元件尺寸的比较,半导体器件的应力,采用的半导体装置的数量,简化和效率进行了总结。包括实验结果,以验证理论分析。

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