GaN-based High Efficiency Bidirectional DC-DC Converter with 10 MHz Switching Frequency

摘要

Wide bandgap (WBG) semiconductor devices allow power electronic converters to achieve higher efficiency, higher power density and potentially higher reliability. However, the design challenges accompanied by applying the new WBG devices have risen accordingly. In this paper, a non-isolated bidirectional DC-DC converter equipped with Gallium Nitride (GaN) semiconductor transistors is presented. The converter's operation principles, zero-voltage switching (ZVS) constraints and dead-time effects are studied. Moreover, the optimization and tradeoffs on the adopted high-frequency inductor are investigated. Based on the theoretical analysis and calculation, a laboratory prototype with a switching frequency up to 10 MHz and the maximum output power of 100 W is constructed and tested. Switching at 10 MHz, a power density of approximately 6.25W/cm~3 and an efficiency of 94.4% in the Buck mode are achieved. Moreover, the measured losses can match the theoretically calculated counterparts well, therefore the design and analysis are verified. However, from the experimental test carried out, it can also be seen, that making a compact converter, even for a GaN-based one, operate at 10 MHz and 100 W is still very challenging due to complex ZVS control, lacks of feasible magnetic materials, and limited thermal dissipation area.