Dual Beam Optical Modulation (DBOM) is a useful tool for the measurement of carrier lifetime in semiconductors. The method is usually applied to bulk semiconductor only. This paper discusses how device simulation approach can be used to interpret results of the method applied to the thin film CuInSe/sub 2/ solar cell. In these materials the simple theory typically based on minority carrier diffusion equation and used to interpret the DBOM measurement is no longer valid. The paper shows that detailed numerical device simulation can be used to provide interpretation of the DBOM measurement of solar cell carrier lifetime. The results prove that majority carrier depletion region shrink is the main factor observed in these measurements.
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机译：双光束光学调制（DBOM）是用于测量半导体中载体寿命的有用工具。该方法通常仅应用于批量半导体。本文讨论了如何使用设备仿真方法来解释应用于薄膜Cuinse / sub 2 /太阳能电池的方法的结果。在这些材料中，简单的理论通常基于少数竞争率扩散方程，并且用于解释DBOM测量不再有效。本文示出了详细的数控模拟可用于提供太阳能电池载体寿命的DBOM测量的解释。结果证明，多数载流量耗尽区收缩是在这些测量中观察到的主要因素。
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