Anodization-Based Area Reduction Process of Nb/Al-AlO_x/Nb Josephson Junctions

摘要

A fabrication process where controlled anodization is used to reduce the area of Nb/Al-AlO_x/Nb Josephaon tunnel junctions is presented. This process could be used to fabricate reproducible high-quality submicrometer junctions using photoresist masking pads of several square micrometer. For junctions with an area of 10 * 10 μm~2 , an edge reduction between 0.5 μm and 1.75 μm has been obtained, with a fine dependence on the anodization parameters.