The paper presents a new kind of noise analysis model of oscillators and an efficient approach to the simulation of accurate near-carrier phase noise in free running microwave MESFET oscillators. The noise analysis model of the oscillator contains a complete nonlinear noise model of the MESFET and all potential noise sources. An efficient algorithm is stated which can be used to predict accurate near-carrier phase noise in microwave MESFET oscilaltors by nonlinear current method. Comparison between simulations and measurements proves that the nosie analysis model of the oscillators is practical and the approach is suitable for microwave CAD and is excellent in both efficiency and precision in predicting phase noise of microwave MESFET oscillators.
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