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A low cost approach to improve the performance of an adjustable speed drive (ASD) under voltage sags and short-term power interruptions

机译:一种低成本的方法,可以提高电压下滑和短期功率中断下可调节速度驱动器(ASD)的性能

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摘要

Voltage sags are a common occurrence in industrial power distribution systems. Although a typical sag may last only 5-20 cycles and voltage magnitude lower than 20% of its rated value can trip an adjustable speed ac drive (ASD). Such a nuisancetripping of a continuous industrial process can be very costly. In this paper, a low cost approach to improve the performance of an ASD under voltage sag and short term interruptions is presented. The approach consists of a low cost modification (addition of three diodes, D{sub}7, D{sub}8, D{sub}9 and an inductor L, Fig. 4) to the front end diode rectifier topology. This modification along with the dynamic braking IGBT (Q{sub}(db)) control (standard component in a ASD) is shown to provide ride-throughcapability for voltage sags. Further, it is shown that with the addition of the diode D{sub}10 and battery E (Fig. 4) the ride-through capability can be extended to short-term power interruptions also. The IGBT Q{sub}(db) is suitably controlled in theevent of a sag to maintain rated dc-link voltage in closed loop, thus avoiding any nuisance tripping or momentary speed fluctuations. A 460 V, 10 hp commercially available ASD is modified with the proposed approach. Analysis, design and simulationresults are discussed. Experimental results illustrating the performance of the ASD with the proposed ride-through topology for a wide range of voltage sag conditions are presented.
机译:电压凹陷是工业配电系统中的常见发生。虽然典型的凹陷可能持续只有5-20个周期,但电压幅度低于其额定值的20%,可以绊倒可调节的速度交流驱动器(ASD)。这种持续工业过程的衡量核心静态可以非常昂贵。本文介绍了提高电压下滑和短期中断下提高ASD性能的低成本方法。该方法包括低成本修改(添加三个二极管,D {Sub} 7,D {Sub} 8,D {Sub} 9和电感器L,图4)到前端二极管整流整流器拓扑。该修改以及动态制动IGBT(Q {Sub}(DB))控制(ASD中的标准组件)显示为提供电压凹凸的驾驶能力。此外,如图所示,通过添加二极管D {Sub} 10和电池e(图4),还可以扩展到短期功率中断。 IGBT Q {Sub}(DB)适当地控制在下垂的凹陷中以保持闭环中的额定直流电电压,从而避免任何滋扰绊倒或瞬时速度波动。通过所提出的方法改变460 V,10 HP可商购的ASD。讨论了分析,设计和仿真结果。提出了一种实验结果,说明了ASD与所提出的乘驾驶拓扑结构在广泛的电压下垂条件的情况下。

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