Numerical analysis of direct current and transient characteristics on n+-i-n+ optically activated switches

摘要

This paper presents simulation results for the dc and transient characteristics of the n$+$PLU@-i-n$+$PLU photoconductive diode at room and cryogenic temperatures fabricated in silicon and in silicon carbide. The simulation is carried out using a two-dimensional device simulator called MEDICI which can solve numerically the Poisson equation, electron and hole current equations, electron and hole continuity equations, as well as heat transfer equation. Relevant physical mechanisms, such as lattice heating, Fermi-Dirac statistics, high-field and doping-dependent free-carrier mobility, and various generation and recombination mechanisms are accounted for in the simulation.