Negative DUV photoresist for 16Mb-DRAM production and future generations

摘要

This paper discusses a new negative tone aqueous base developable photoresist that has demonstrated excellent sub-half micron resolution with commercially available DUV (deep ultraviolet) exposure systems. This system which consists of a phenolic resin (pHOST), a glycoluril crosslinker (TMMGU), and a triflic acid generating material is currently in use for the manufacturing of 16 M b-DRAM and related CMOS logic technology. We provide supporting manufacturing data relating to our experiences with this program, along with the benefits realized by the implementation of a negative tone photoresist system.