Comparison of semiconductor device losses in hard switched and zero voltage switched inverter systems

摘要

Presents a detailed investigation of losses in IGBT modules in hard switched PWM and zero voltage switched inverter systems. To measure the semiconductor device losses a one phase test circuit in which the semiconductor devices are stressed in similar way as in a real inverter system is described. The test circuit allows the investigation of the semiconductor devices in a hard switched inverter, an active clamped resonant DC link inverter, and an auxiliary resonant commutated pole inverter.