High-efficiency three-terminal laser array for optical interconnect

摘要

d InGaAs/GaAs quantum well three terminal lasers with monolithically integrated intracavity modulators were fabricated using low threshold current structures formed by the temperature engineered growth (TEG) technique. An on-off efficiency ratio of 556 with optical power contrast ratio of 7.5 was measured with a total DC power consumption of 25.3 mW. Preliminary digital modulation shows bit error rate (BER) lower than 10$+$MIN@16$/ at 500 Mb/s. A theoretical analysis of the dynamic behavior of this device shows potential operation of 6.6 Gb/s with low inter- symbol interference.