Ion implantation is an essential technology for incorporating dopant atoms in semiconductor. However, heating process at a temperature higher than 600°C is required for activating implanted region in general owing to the large activation energy for moving dopant atoms from the interstitial sites to the lattice sites or recrystallizing disordered silicon states caused by high energy ion implantation. The activation of dopant atoms at a low temperature is a problem to apply the ion implantation technology to device fabrication at low temperature processing. We proposed two-step ion implantation argon precursor ion (Ar+) followed by boron dopant ion (B+) implantations to achive low temeprature activation [1,2]. This papper reports the appropriate condition of formation of disordered states by the two step implantation and of recrystallization of the disordered region by the post heating 400°C, whcih promotes effective acrivation of the doped silicon.
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