A 433 MHz e-GaN HEMT based Power Oscillator for Far Field Wireless Power Transfer

摘要

This paper presents a power oscillator design based on a class E power amplifier. The enhancement GaN HEMT is used for its fast switching time, low ON resistance and low temperature sensitivity. The presented circuit is designed to be used in far field wireless charging which is the 2^{nd generation in this type of chargers. The simulated output power of the power oscillator is 24.9 W at the ISM band of 433 MHz. Effect of design parameter variability is also studied.}