Impact of Cu Doping on PV Cell Parameters of NiO:Cu Nanostructure-Based Organic-Inorganic Perovskite Solar Cells

摘要

Solar energy is abundant, reliable, and clean among all the existing renewable energy sources. Due to the fast growth of the conversion efficiency of organic-inorganic perovskite (PVT) solar cells (PSCs) has fascinated the consideration of the researchers and photovoltaic (PV) industries. To achieve high performance and stability, the selection of a hole-transport material (HTM) of PSC is essential. In this regard, we have studied the potential of solution-processed Cu-doped NiO (NiO:Cu) nanoparticles (NPs) as efficient HTL for PSCs. NiO:Cu is also able to decrease the recombination at the HTL/PVT interface. The optical loss and charge transportation rate is analyzed with the Cu doping concentration. The UV-Vis result shows that the maximum transmittance NiO:Cu HTL is obtained at a Cu doping concentration of 5%. Moreover, the time-resolved photoluminescence reviled that the same NiO:Cu HTL with Cu doping of 5% has the greatest hole transportation rate. The obtained values Jsc, Voc, FF and η of the champion PSC are 21.26 mA/cm2, 1.033 V, 0.7261, and 15.95%, respectively for RCu/Ni = 5%.