A New Type of Kelvin-Source SiC-VMOSFET for a High-Power Single-Ended Wireless EV Charger

摘要

In recent years, expectations for electric vehicles have been increasing as a countermeasure against global warming. A key to their widespread adoption is the development of small-size, lightweight, and low-cost electric vehicle chargers. Electric vehicle chargers with wireless power transfer (WPT) are easier to use, cleaner, and automatically than conventional wired charger. We propose a low-cost WPT apparatus with single-ended inverter based on a new type of V-groove trench SiC-MOSFET(SiC-VMOSFET), with the addition of a Kelvin source to improve gate drive. First, we describe the compact and lightweight WPT apparatus of using a single-ended converter. Second, estimated is a high power WPT apparatus which has a low on-resistance and high breakdown voltage SiC-VMOSFET. Next, we describe the new kelvin-driven SiC device using an improved Kelvin source connection and improvement of circuit pattern to reduce the switching loss.