Analytical analysis of piezoelectric field on the optoelectronic characteristics of green GaN-based light-emitting diodes

摘要

In this work, we have analyzed the behavior of optoelectronic characteristics i.e. internal quantum efficiency (IQE) by the influence of piezoelectric field. This effect was not considered in widely reported models such as the Standard ABC model, Rate equation model, and phase-space-filling model. In Gallium Nitride (GaN)-based light-emitting diodes (LEDs), the active region is comprised of InGaN/GaN layers. For the emission of green light, high composition of indium is needed in InGaN layer. As a result, the lattice mismatch between GaN and InGaN layer is highly dominated, which leads to strong piezoelectric field. Our proposed calculation by including piezoelectric field shows better agreement with the experimental IQE of green LED. Meanwhile, we have proposed a single quantum well (SQW) device structure with reduced piezoelectric field as compared to the conventional structure.