Investigation of De-embedding Techniques Applied on Uni-Traveling Carrier Photodiodes

摘要

This work reviews and investigates two de-embedding methods contributing to the characterization of the active region within uni-traveling carrier photodiodes. De-embedding techniques remove the parasitic effects of the waveguides connected to the active area of these devices allowing the calculation of their series resistance and junction capacitance. The Open-Short method is examined where a systematic error introduced by the technique is identified. This error is analytically extracted and a correction is implemented. The properties of an S-Parameter based de-embedding are also analyzed through simulation approaches. The lumped components calculated and verified by these processes are compared for diodes with different sizes.