OPtical pumping of non-identical quantum wells in an active region of semiconductor vertical-external-cavity surface-emitting laser

摘要

The numerical modelling of optically pumped structure composed of two non-identical quantum wells is presented. It is shown that the equalization of quantum well carrier population could be achieved by the two ways: provided the deeper quantum well is located in the area of small carrier generation rate or provided the additional blocking layer preventing the carrier transport is inserted between the quantum wells. More compact laser structure could be made when the second approach is utilized.