A new integration technology that enables forming bonding pads on active areas

摘要

A new integration technology for reducing LSI chip area by placing bonding pads on the active area (BPA Technology) is proposed. The key technique in this technology is the forming of a mechanically firm insulating film which can withstand, and protect underlaying devices from, severe stress. Mechanically strengthened insulating films have been newly developed for this purpose. The films endure stress 3 times greater than ordinary thermo-compression bonding stress without cracking. Deviations in device characteristics are neglegiblly small under these conditions. The feasibility of using BPA in LSI technology is confirmed by the manufacture of 16K MOS DRAM's and examination of their memory circuit characteristics and reliability.