A light-activated low-level switch has been developed for multiplexing applications. The switch consists of an electroluminescent GaAs PN diode and a double emitter silicon transistor. (Both NPN and PNP units have been made.) The two (light emitter and detector) are coupled optically. The switch is a substantial improvement over existing switching devices used in multiplexors. A general design theory based on Ebers & Moll's paper is given with special emphasis on breakdown voltage, "ON" impedance, offset voltage, and switching speed. It is shown how the design considerations lead to a specific geometry for the detector. Results of extensive testing are reported. The devices operating with a 100 mw diode input showed the following characteristics: NPN PNP BVEE20-25 v 30-40 v REE10-15 Omega <100 OmegaVo<50 µv <50 µv ton{RL=10K} {RL=1M} < 3 µsec < 3µsec toff{RL=10K} <10 µsec <10 µsec {RL=1M} <150 µsec <150 µsec
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机译：已开发出一种光激活的低电平开关，用于多路复用应用。该开关由电致发光GaAs PN二极管和双发射极硅晶体管组成。 （已经制造了NPN和PNP单元。）两者（光发射器和检测器）光学耦合。该开关是对多路复用器中使用的现有开关设备的重大改进。给出了基于Ebers＆Moll论文的一般设计理论，其中特别强调了击穿电压，“ ON”阻抗，失调电压和开关速度。它显示了设计注意事项如何导致检测器具有特定的几何形状。报告了广泛测试的结果。使用100 mw二极管输入工作的设备具有以下特性：NPN PNP BV EE 20-25 v 30-40 v R EE 10-15 Omega < 100 Omega V o <50 µv <50 µv t 在上{R L = 10K} {R L < / inf> = 1M} <3 µsec <3µsec t off {R L = 10K} <10 µsec <10 µsec {R L = 1M} <150微秒<150微秒
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