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Impact of Diode Geometry on Local Oscillator Breakthrough in Sub-Harmonic Mixers

机译:二极管几何形状对次谐波混频器中本地振荡器突围的影响

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摘要

An investigation in to the asymmetry of the current-voltage characteristics and the local-oscillator breakthrough in anti-parallel diode sub-harmonic mixers is presented. Twenty nine bare anti-parallel diode pair circuits, have been used to identify those aspects of the diode geometry, that have a strong influence on the diode mismatch and consequently the local-oscillator breakthrough. The circuits were fabricated on a six-inch Gallium Arsenide high electron mobility transistor process.
机译:研究了反并联二极管次谐波混频器中电流-电压特性的不对称性和本振的突破。已经使用了二十九个裸露的反并联二极管对电路来识别二极管几何形状的那些方面,这些方面对二极管失配以及本地振荡器的突破有很大影响。这些电路是在六英寸砷化镓高电子迁移率晶体管工艺上制造的。

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