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Energy-Efficient Dynamic Data Encoding for Multi-level STT-MRAM

机译:多级STT-MRAM的高效节能动态数据编码

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Spin-Torque-Transfer Magnetic RAM (STTMRAM) is a promising candidate for next generation on-chip last level cache memory. Such technology offers non-volatility, excellent scalability, and CMOS process compatibility. Even though multi-level version of such memories offer more capacity than their single-level counterpart, it suffers from high write energy as well as performance overhead. These unwanted characteristics are due to Two-step Transition (TT) and Hard-Transition (HT). In this paper, we propose a dynamic resistance-to-logic state encoding to minimize energy in MLC STT-MRAM based caches. The proposed encoding/decoding scheme are presented algorithmically and at architectural level. Results on PARSEC benchmarks showed an average reduction of 55% in energy as compared to a recently proposed low power encoding approach.
机译:自旋扭矩传递磁性RAM(STTMRAM)是下一代片上末级高速缓存存储器的有希望的候选者。此类技术具有非易失性,出色的可扩展性和CMOS工艺兼容性。尽管此类存储器的多层版本比其单层版本提供的容量更大,但它遭受着高写入能量以及性能开销的困扰。这些不良特性是由于两步过渡(TT)和硬过渡(HT)而引起的。在本文中,我们提出了一种动态的抗逻辑状态编码,以最小化基于MLC STT-MRAM的缓存中的能量。提出的编码/解码方案在算法上和体系结构级别上进行了介绍。与最近提出的低功耗编码方法相比,PARSEC基准测试的结果表明,平均能耗降低了55%。

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