首页> 外文会议>IEEE Asian Solid State Circuits Conference >A 1-V 9.8-ENOB 100-kS/s single-ended SAR ADC with symmetrical DAC switching technique for neural signal acquisition
【24h】

A 1-V 9.8-ENOB 100-kS/s single-ended SAR ADC with symmetrical DAC switching technique for neural signal acquisition

机译:具有对称DAC切换技术的1-V 9.8-ENOB 100-kS / s单端SAR ADC,用于神经信号采集

获取原文
获取外文期刊封面目录资料

摘要

This paper reports a high-performance low-power and area-efficient single-ended SAR ADC for neural signal acquisition. The proposed 10-bit ADC features a novel symmetrical DAC switching technique that resolves the signal-dependent comparator offset voltage problem in conventional single-ended SAR ADCs, and improves the ADC's ENOB. Combined with an existing LSB single-sided switching method, the proposed switching scheme reduces DAC switching energy by 92% and capacitor array area by 50%. Besides, the proposed ADC also eliminates the need for any power consuming Vcm generation circuit, making it more suitable for low-power System-on-Chip (SoC) integration. The 10-bit prototype ADC is fabricated in a standard 0.18-um CMOS technology. Operating at 1.0 V power supply and 100 kS/s, the proposed ADC achieves 58.83 dB SNDR and 63.6 dB SFDR for a 49.06 kHz input signal. The maximum ENOB is 9.8-bit for low frequency input signal; and the minimum ENOB is 9.48-bit at the Nyquist input frequency. The average power consumption is 1.72 μW and the fig re-of-merit (FoM) is 24.1 fJ/conversion-step.
机译:本文报告了一种用于神经信号采集的高性能,低功耗和面积效率高的单端SAR ADC。拟议中的10位ADC具有新颖的对称DAC开关技术,该技术解决了传统单端SAR ADC中与信号有关的比较器失调电压问题,并改善了ADC的ENOB。结合现有的LSB单侧开关方法,提出的开关方案可将DAC开关能量减少92%,将电容器阵列面积减少50%。此外,拟议的ADC还消除了对任何功耗Vcm生成电路的需求,使其更适合于低功耗片上系统(SoC)集成。 10位原型ADC采用标准的0.18um CMOS技术制造。拟议的ADC在1.0 V电源和100 kS / s下工作,对于49.06 kHz输入信号,其达到58.83 dB的SNDR和63.6 dB的SFDR。低频输入信号的最大ENOB为9.8位。在奈奎斯特输入频率下,最小ENOB为9.48位。平均功耗为1.72μW,无花果的品质因数(FoM)为24.1 fJ /转换步长。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号