Impact of doping concentration and temperature variation on the noise performance of separate gate InAlAs/InGaAs DG-HEMT

摘要

Impact of donor-layer doping concentration and temperature variation on the various noise coefficients and minimum noise figure is investigated for separate gate InAlAs/InGaAs DG-HEMT, in this paper. The noise coefficients, which include the drain noise coefficient (P), gate noise coefficient (R), the correlation coefficient (C) and the minimum noise figure have been evaluated using Pucel's charge control based approach. The behavior of P, R, C noise coefficients and the minimum noise figure with doping concentration and temperature variation predict their influence on the overall noise performance of the device.