首页> 外文会议>IEEE Bipolar/BiCMOS Circuits and Technology Meeting >A low power, low noise 3nV/#x221A;Hz 200fA/#x221A;Hz, rapid settling instrumentation amplifier with sub-ppm nonlinearity, 0.2#x00B5;V/#x00B0;C max offset drift, 150dB CMRR in 5-to-36V supply
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A low power, low noise 3nV/#x221A;Hz 200fA/#x221A;Hz, rapid settling instrumentation amplifier with sub-ppm nonlinearity, 0.2#x00B5;V/#x00B0;C max offset drift, 150dB CMRR in 5-to-36V supply

机译:低功耗,低噪声3nV /√Hz200fA /√Hz,快速建立仪表放大器,具有亚ppm非线性,0.2µV /°C的最大失调漂移,5至36V电源中的150dB CMRR

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An instrumentation amplifier with 3nV/√Hz and 200fA/√Hz RTI noise, 20MHz bandwidth, 40V/µs slew rate, consumes 2mA from a ±2.5V to ±18V supply range. Its high gain CMRR of greater than 150dB and its unity gain error of less than 0.01% extend over temperatures from −55°C to 150°C. It has a sub-ppm load independent gain nonlinearity (THD < −125dBc) for its full output range, from DC to 2 kHz. Vosi distribution is within ±25µV, drifting less than 0.2µV/°C from −55°C to 150°C. Settling time is less than 0.6µs to 10ppm of a 10V output step. The amplifier is designed in an SOI complementary bipolar process with a die size of 3.3mm2.
机译:一个具有3nV /√Hz和200fA /√HzRTI噪声,20MHz带宽,40V / µs压摆率的仪表放大器,在±2.5V至±18V的电源范围内消耗2mA的电流。它的高增益CMRR大于150dB,单位增益误差小于0.01%,可在-55°C至150°C的温度范围内扩展。在DC至2 kHz的整个输出范围内,它具有低于ppm的与负载无关的增益非线性(THD <-125dBc)。 Vosi分布在±25µV之内,从-55°C到150°C的漂移小于0.2µV /°C。 10V输出阶跃的建立时间小于0.6µs至10ppm。该放大器采用SOI互补双极工艺设计,管芯尺寸为3.3mm 2

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