Spin-orbit torque induced switching of antiferromagneton-magnet metallic structure

摘要

Utilization of antiferromagnets (AFMs) as active components of spintronic devices offers several uniqueadvantages complementing current ferromagnet (FM) based spintronic architectures. The capability ofelectrical writing and reading is crucial for the development of AFM-based spintronic devices. One of thepossible candidates satisfying the requirement is Mn-based metallic alloys (Mn-X where X = 4d/5d metal). Inour previous work, we have demonstrated magneto-resistive effects in an AFM/heavy-metal (HM) PtMn/Ptstructure, which offers electrical reading scheme of stored information without auxiliary FMs. Here, wedemonstrate electrical writing of PtMn/Pt by spin-orbit torques.