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Al-W Alloy Deposition from Lewis Acidic Room-Temperature Chloroaluminate Ionic Liquid

机译:Lewis酸性室温氯铝酸盐离子液体中的Al-W合金沉积

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The electrochemistry of binuclear tungsten salt, K_3[W_2Cl_9], wasexamined in the Lewis acidic 66.7-33.3 mole percent (m/o)aluminum chloride–1-ethyl-3-methylimidazolium chloride (AlCl_3–[EtMeIm]Cl) room-temperature ionic liquid as it pertains to theelectrodeposition of the Al-W alloy. We revealed that Al-W alloywithout chloride contamination can be electrodeposited from the66.7 m/o AlCl_3-[EtMeIm]Cl with the K_3[W_2Cl_9]. Interestingly Al-W alloy having an amorphous phase as well as W-rich Al alloy over96 atomic present (a/o) W were successfully produced. However theAl-W alloy became covered with powdery deposits with increasingthe W content in the alloy. The resulting Al-W alloy showed afavorable chloride-induced pitting potential comparable to thatproduced by a usual sputtering method if the W content was lessthan ca. 3 a/o W.
机译:双核钨盐K_3 [W_2Cl_9]的电化学为 在Lewis酸性66.7-33.3摩尔百分比(m / o)中进行了检测 氯化铝–1-乙基-3-甲基咪唑鎓氯化物(AlCl_3– [EtMeIm] Cl)室温离子液体,与 铝钨合金的电沉积。我们发现铝钨合金 没有氯化物污染可以从 66.7 m / o AlCl_3- [EtMeIm] Cl和K_3 [W_2Cl_9]。有趣的是 具有非晶相的W合金以及富W的Al合金 成功产生了96个原子存在的(a / o)W。但是,那 Al-W合金随着增加而被粉末状沉积物覆盖 合金中的W含量。所得的Al-W合金显示出 氯化物引起的有利点蚀潜力可与之媲美 如果W含量少,则通过通常的溅射法制造 比约。 3 a / oW。

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