Fabrication of pentacene organic field-effect transistors containing SiO₂ nanoparticle thin film as the gate dielectric

摘要

Pentacene organic field-effect transistors (OFETs) were fabricated and investigated with thermal oxide and a self-assembled SiO₂ (SA-SiO₂) nanoparticle thin-film as the gate dielectrics. SA-SiO₂ film functions well as a gate dielectric with a breakdown field larger than 0.57 MV/cm and leakage current less than 2 nA/mm2 with an applied voltage of 20 V. Being a low-cost and low-temperature process, self-assembly is extremely suitable for OFET fabrication. Dual-gate pentacene FETs containing SA-SiO₂ thin-film are presented as a new structure with good performance.