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Pulsed-power diode generation of high-power microwaves

机译:大功率微波的脉冲功率二极管生成

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The generation of microwave radiation at gigahertz frequencies in high-voltage pulsed-power diodes has been investigated with electromagnetic particle simulations. Pulsed power in the form of a 0.5–1.0MV, TEM wave is fed to the diode via a 5-cm diameter cylindrical stalk onto which a 30-cm diameter cathode has been mounted. Located some 3–5 cm in front of the cathode is a foil anode grid. As the TEM wave propagates between the stalk and an outer cylindrical cage (70-cm diameter) a stream of electrons is emitted off the stalk when the local electric field exceeds 200 kV/cm. This flow is then magnetically insulated and confined by the induced Be fields resulting from the 25–50-kA current flow within the stalk. Convex shaping of the cathode surface allows the emitted electrons to form a virtual cathode beyond the grid, then phase bunch to produce narrow bandwidth 1-GHz microwaves over an area equal to that of the cathode. The electromagnetic radiation from the dipole-like electron motions centered on the grid, which follow closely the classical Barkhausen-Kurz description, is reported.
机译:已经通过电磁粒子模拟研究了在高压脉冲功率二极管中以千兆赫兹频率产生微波辐射的情况。脉冲功率为0.5–1.0MV的TEM波通过直径为5 cm的圆柱状茎杆(其上已安装直径为30 cm的阴极)馈入二极管。箔阳极网格位于阴极前约3–5 cm处。当TEM波在茎杆和外部圆柱笼(直径70厘米)之间传播时,当局部电场超过200 kV / cm时,电子流会从茎杆发出。然后,该气流被磁绝缘,并受到秸秆内部25–50 kA电流产生的感应Be场的限制。阴极表面的凸形允许发射的电子形成超出网格的虚拟阴极,然后相束以在与阴极相等的面积上产生窄带宽的1 GHz微波。据报道,来自偶极子状电子运动的电磁辐射以网格为中心,并严格遵循经典的Barkhausen-Kurz描述。

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