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A Wide Tuning Range LC VCO through Switched Capacitor Bank using TSMC 180nm Technology

机译:采用台积电180nm技术的宽量程LC VCO通过开关电容器组

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摘要

A new design approach for obtaining low phase noise (PN) has been presented by means of current reusing procedure for this literature. A MOS capacitor bank has been used for fine tuning. The circuit has been realized with TSMC 180nm technology for 2.45GHz center frequency. Acquired phase noise is of the order of −123.7 dBc/Hz and −82dBc/Hz @1MHz and @100Hz respectively.
机译:通过该文献的当前重用程序介绍了获得低相位噪声(PN)的新设计方法。 MOS电容器组已用于微调。该电路已经实现了TSMC 180nm技术,用于2.45GHz中心频率。获取的阶段噪声分别为-123.7 dBc / hz和-82dBc / hz @ 1mHz和@ 100Hz的顺序。

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