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LLC Converter Design in Capacitive Operation utilizes ZCS for IGBTs – a Concept Study for a 2.2 kW Automotive DC-DC Stage

机译:电容操作中的LLC转换器设计将ZCS用于IGBT –对2.2 kW汽车DC-DC级的概念研究

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LLC resonant converters generally employ MOSFETs in the inverter stage, which can be of half-bridge (HB) or full-bridge (FB) type. The generally weak intrinsic (body) diodes of the MOSFETs cause turn-on losses when being forced to hard current commutations finally leading to the components self-destruction when operated constantly in this way. Consequently, zero-voltage switching (ZVS) operation is more or less essential in a silicon (Si) MOSFET-based HB or FB. To ensure ZVS, the LLC is operated in the inductive region, i.e. with lagging resonant current. On the contrary, IGBTs show dominant turn-off losses and therefore are conventionally not applied in LLCs typically requiring high switching frequencies to achieve low output voltages. Yet, if the LLC is intentionally designed for the capacitive region, i. e. operation with leading current, zero-current switching (ZCS) enabling IGBTs in the inverter stage can be ensured. This paper explores in detail the LLC in the capacitive operating region and gives design considerations for a capacitive LLC utilizing both robust and cost-efficient IGBTs for an exemplary 2.2 kW automotive on-board DC-DC converter application. The results of a loss analysis show that the LLC resonant converter can be operated well in the capacitive region. In the given case, significantly lower overall and 30 % lower inverter stage losses are achieved in the thermally relevant worst-case comparison with an inductive LLC based on Si MOSFETs.
机译:LLC谐振转换器通常在逆变器级中使用MOSFET,该晶体管可以是半桥(HB)或全桥(FB)型的。 MOSFET的通常较弱的本征(体)二极管在被迫进行硬电流换向时会导致导通损耗,最终在以这种方式持续运行时会导致组件自毁。因此,在基于硅(MOSFET)的HB或FB中,零电压开关(ZVS)操作或多或少是必不可少的。为了确保ZVS,LLC在感性区域内工作,即在滞后的谐振电流下工作。相反,IGBT显示出主要的关断损耗,因此通常不应用于通常需要高开关频率才能实现低输出电压的LLC。然而,如果LLC是专为电容性区域设计的,则e。可以确保在超前电流下运行,零电流开关(ZCS)在逆变器级中使能IGBT。本文详细探讨了电容性工作区域中的LLC,并给出了针对示例性2.2 kW汽车车载DC-DC转换器应用的采用坚固耐用且具有成本效益的IGBT的电容性LLC的设计考虑因素。损耗分析的结果表明,LLC谐振转换器可以在电容区域内良好运行。在给定的情况下,与基于Si MOSFET的电感式LLC在热相关的最坏情况下相比,可实现更低的整体逆变器损耗和30%的逆变器级损耗。

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