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PCB Embedded Chip-on-Chip Packaging of A 48 kW SiC MOSFET DC-AC Module with Double-Side Cooling Design

机译:具有双面冷却设计的48 kW SiC MOSFET DC-AC模块的PCB嵌入式芯片级封装

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摘要

Packaging technology is a major challenge to tapping the performance potential of wide bandgap devices. This paper proposes a packaging design based on the printed circuit board embedded technology, chip-on-chip concept, and pressure-based contact. A silicon carbide DC-AC power module with 800V maximum voltage and 48kW continuous power is designed, which has an ultra-tiny volume dimensioned with 90 mm length, 40 mm width, and 3 mm thickness. By vertically stacking the two dies of one phase leg, the conduction path is shortened which leads to a low stray inductance. In this design, ceramic sheets are used to replace the conventional thermal interface material. Proper contacts between the module, the ceramic sheets, and the cooling system are achieved by applying clamping force. The electrical performance and thermalmechanical performance of the proposed design are evaluated by finite element analysis, including temperature distribution, thermal stress distribution, and the conduction loop stray inductance.
机译:封装技术是挖掘宽带隙器件性能潜力的主要挑战。本文提出了一种基于印刷电路板嵌入式技术,芯片上芯片概念和基于压力的接触的封装设计。设计了具有800V最大电压和48kW连续功率的碳化硅DC-AC电源模块,该模块具有超小体积,尺寸为90毫米长,40毫米宽和3毫米厚。通过垂直堆叠一个相脚的两个管芯,缩短了导电路径,从而降低了杂散电感。在这种设计中,陶瓷片用于代替传统的热界面材料。通过施加夹紧力可实现模块,陶瓷板和冷却系统之间的正确接触。通过有限元分析,包括温度分布,热应力分布和传导回路杂散电感,对所提出设计的电气性能和热机械性能进行了评估。

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