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EMS Characterization of LDO with on-Chip Decaps by Using Direct RF Power Injection Method

机译:通过使用直接RF功率注入方法,EMS具有片上垫料的LDO表征

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摘要

A fully integrated low dropout regulator (LDO) with decoupling capacitors (decaps) for high electromagnetic immunity is designed in the standard 0.18 μm CMOS technology. The decaps composed of MOS and MoM capacitors are utilized to decouple the high frequency interference. The characteristic of electromagnetic susceptibility (EMS) of the LDO is performed by the direct RF power injection (DPI) measurement up to 18 GHz. The measured results demonstrate the immunity of LDO with decaps is superior to that of LDO without decaps (maximum improvement of 11.6 dB). Also, the wideband DPI measurement is shown to be capable of characterizing the EMS of ICs.
机译:具有去耦电容器(摘要)的完全集成的低压丢弃调节器(LDO),用于高电磁免疫力的标准0.18μmCMOS技术。利用由MOS和MOM电容组成的折叠来解耦高频干扰。 LDO的电磁敏感度(EMS)的特性由直接的RF功率注入(DPI)测量进行高达18 GHz进行。测量结果证明了LDO的免疫力脱落优于LDO的抗湿度(11.6dB的最大改善)。此外,宽带DPI测量显示能够表征IC的ECS。

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