High-Linearity V-Band InGaAs/InP Photodiodes Working at 1064 nm

摘要

We demonstrate the modified uni-travelling-carrier (MUTC) photodiodes achieving RF power levels of 21.7 dBm to 15 dBm in the frequency range of 39 GHz to 60 GHz, respectively, at 1064 nm wavelength. The photodiodes show good linearity with a third-order intercept point (OIP3) up to 33 dBm at 40 GHz.