首页> 外文会议>ASME international mechanical engineering congress and exposition >MEASUREMENT OF THE RESIDUAL STRESS DISTRIBUTION IN THE 3D- STACKED ELECTRONIC MODULES BY EMBEDDED STRAIN SENSORS
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MEASUREMENT OF THE RESIDUAL STRESS DISTRIBUTION IN THE 3D- STACKED ELECTRONIC MODULES BY EMBEDDED STRAIN SENSORS

机译:用嵌入式应变传感器测量3D叠层电子模块中的残余应力分布。

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In this study, micro-scale strain sensors were embedded in a silicon chip to measure the variation of the local stress distribution around thin film interconnections used for 3D semiconductor modules. Piezoresistive effect of single crystal silicon was applied to the sensors. The stress sensitivity at room temperature was 1.3 MPa/Ω. Even though the stress sensitivity varied as a strong function of temperature, it was confirmed that this sensor can measure the stress distribution quantitatively in the temperature range from room temperature to 80°C at most. And the variation of the residual stress in electroplated copper thin films during heat treatment was investigated from the viewpoint of the change of stress amplitude during a thermal cycle. From the obtained results, it was confirmed that the recrystallization occurred when the films were annealed at only 200°C, and the change of the micro textue of the films caused the change of their residual stress. Therefore, it is very important to control the micro texture during electroplating for assuring long term reliability of interconnections.
机译:在这项研究中,将微型应变传感器嵌入到硅芯片中,以测量用于3D半导体模块的薄膜互连周围的局部应力分布的变化。将单晶硅的压阻效应应用于传感器。室温下的应力敏感性为1.3MPa /Ω。即使应力灵敏度随温度的强函数而变化,也已确认该传感器最多可以定量测量从室温到80°C的温度范围内的应力分布。并从热循环过程中应力幅值的变化角度研究了电镀铜薄膜在热处理过程中残余应力的变化。从获得的结果可以确认,当仅在200℃下对膜进行退火时,发生了再结晶,并且膜的微观组织的变化引起了其残余应力的变化。因此,在电镀期间控制微结构对于确保互连的长期可靠性非常重要。

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