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Dielectric Response and Charge Injection Behavior for Cu/PMMA/Pt and Cu/PMMA-Si

机译:Cu / PMMA / Pt和Cu / PMMA / n-Si的介电响应和电荷注入行​​为

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Metal - Insulator - Metal (MIM) and Metal - Insulator- Semiconductor (MIS) capacitors were fabricated by spin coating poly (methyl methacrylate) (PMMA) as the insulating material. Here, we consider the effect of dissimilar contact electrodes systems (Cu/Pt and Cu-Si) on the dielectric and electrical response. From the frequency- and temperature- dependent dielectric measurements, it was found that Cu/PMMA-Si interface has an additional contribution that affects the dielectric properties. Activation energies obtained from the ohmic conduction in forward bias showed a higher value in activation energy for Cu/PMMA-Si compared to that for Cu/PMMA/Pt, demonstrating the possible contribution of interfacial regions. Further experiments under reverse bias were carried out to study the importance of polarization in the electrical response.
机译:金属-绝缘体-金属(MIM)和金属-绝缘体-半导体(MIS)电容器是通过旋涂聚(甲基丙烯酸甲酯)(PMMA)作为绝缘材料而制成的。在这里,我们考虑了不同的接触电极系统(Cu / Pt和Cu / n-Si)对介电和电响应的影响。从依赖于频率和温度的介电测量结果中,发现Cu / PMMA / n-Si界面具有影响介电性能的其他贡献。与Cu / PMMA / Pt相比,从正向偏压中的欧姆传导获得的活化能在Cu / PMMA / n-Si的活化能中显示出更高的值,证明了界面区域的可能作用。在反向偏置下进行了进一步的实验,以研究极化在电响应中的重要性。

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