Millimeter-Wave Analog Pre-distorted Power Amplifier at 65nm Node

摘要

Power amplifiers are used to increase the input power level and generate the required output power in wireless communication. In this work a 28GHz power amplifier is designed with built-in passive analog predistortion linearizer for mm-wave fifth generation (5G) and other related standard applications. To maximize the gain of the amplifier and to improve the linearity of the designed circuit the inductive peaking and cold mode MOSFET linearizer method has been used correspondingly. The design circuit is simulated using Global Foundries 65 nm CMOS technology. The simulated results on the extracted (post-layout) design shows +19.84dBm of linear output power and 15% of power added efficiency. The output referred 1-dB compression point is obtained as 18.64dBm.