首页> 外文会议>IEEE MTT-S International Microwave Symposium >Highly Robust 130 nm SiGe BiCMOS Power Limiter, LNA and Mixer IC for a Wideband 1.5 - 18 GHz MIMO Radar Receiver
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Highly Robust 130 nm SiGe BiCMOS Power Limiter, LNA and Mixer IC for a Wideband 1.5 - 18 GHz MIMO Radar Receiver

机译:适用于1.5-18 GHz宽带MIMO雷达接收器的高度耐用的130 nm SiGe BiCMOS功率限制器,LNA和混频器IC

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摘要

This work presents a highly robust 1.5 - 18 GHz high dynamic range power limiter, low noise amplifier (LNA) and mixer IC. A novel power limiter design concept is introduced, which stands out for its low capacitive behavior. The circuit withstands input power levels up to 25 dBm while demonstrating a good noise matching up to 18 GHz. The design approach features a distributed fully differential LNA and a double balanced common base input mixer to enhance the linearity and the wideband performance. The active power limiter, LNA and mixer IC was fabricated on a 130 nm SiGe BiCMOS technology, it draws a total of 62 mA from a 3 V DC power supply and the active IC area is 0.65 mm2.
机译:这项工作提出了一个高度健壮的1.5-18 GHz高动态范围功率限制器,低噪声放大器(LNA)和混频器IC。引入了一种新颖的功率限制器设计概念,该概念以其低电容特性而著称。该电路可承受高达25 dBm的输入功率,同时具有高达18 GHz的良好噪声匹配能力。该设计方法采用分布式全差分LNA和双平衡公共基极输入混频器,以增强线性度和宽带性能。有源功率限制器,LNA和混频器IC是在130 nm SiGe BiCMOS技术上制造的,它从3 V直流电源中汲取的总电流为62 mA,有源IC面积为0.65 mm 2

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