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Beam Test Measurements on Planar Pixel Sensors for the CMS Phase 2 Upgrade

机译:CMS阶段2升级的平面像素传感器上的光束测试测量

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The requirements for the CMS Inner Tracker for the high luminosity upgrade of the Large Hadron Collider (LHC) are driven by the high expected instantaneous luminosity of up to 7.5 × 1034cm−2s−1. The detector will have to withstand a 1 MeV neutron equivalent fluence of up to 2 × 1016 cm−2 at 2.8 cm distance from the beam. To improve the spatial resolution and limit cluster merging in this environment the current pixel size of 100×150 μm2 will be reduced by a factor of 6. Planar pixel sensors are the baseline technology for the outer 3 of the 4 pixel layers, where the irradiation level will reach a 1 MeV neutron equivalent fluence of 5 × 1015 cm−2. For the innermost layer 3D sensors are also considered. Several variants of new n+p-planar pixel sensors with pixel sizes of 50×50 μm2 and 100 × 25 μm2 and an active thickness of 150 μm have been designed, produced and bump bonded to readout chips. Apart from the pixel size, the design variants differ with respect to the implantation and metalization layout as well as the pixel isolation and biasing scheme. To select the most promising design for the future CMS Inner Tracker, these sensors were irradiated with protons and neutrons up to 1 MeV neutron equivalent fluences of 14 × 1015 cm−2 and characterized at the DESY H test beam facility. The key requirement, a hit efficiency above 99 % at bias voltages below 800 V, is met for sensors proton irradiated to IMeV neutron equivalent fluences above 5 × 1015 cm−2, thus demonstrating the suitability of planar sensors for the pixel layers 2 to 4. In addition, the hit efficiency, signal to noise ratio and spatial resolution are determined as a function of the bias voltage, neutron equivalent fluence and angle, for proton and neutron irradiation and for different design variants, providing input for the final choice of the sensor design.
机译:大型强子对撞机(LHC)高亮度升级的CMS内部跟踪器的要求是由高达7.5×10的高预期瞬时亮度驱动的 34 厘米 −2 s -1 。探测器必须承受高达2×10的1 MeV中子等效注量。 16 厘米 −2 距光束2.8厘米处。为了提高空间分辨率并在这种环境下限制群集合并,当前像素大小为100×150μm 2 将减少6倍。平面像素传感器是4个像素层中外部3个层的基线技术,其照射水平将达到5×10的1 MeV中子等效注量。 15 厘米 −2 。对于最内层,还考虑了3D传感器。新n的几种变体 + 像素尺寸为50×50μm的p平面像素传感器 2 和100×25μm 2 已经设计,生产出了150μm的有源厚度,并将其凸点结合到读出芯片上。除了像素大小以外,设计变体在注入和金属化布局以及像素隔离和偏置方案方面也有所不同。为了为未来的CMS内部跟踪器选择最有前途的设计,这些传感器接受了质子和中子辐照,其质子通量可达1 MeV,中子等效通量为14×10 15 厘米 −2 并在DESY H测试梁设备上进行了表征。关键要求是,将质子辐照到5×10以上的IMeV中子等效通量时,传感器的质子必须满足以下要求:在低于800 V的偏置电压时,击中效率必须高于99%。 15 厘米 −2 ,因此证明了平面传感器适用于像素层2到4。此外,对于质子和中子,命中效率,信噪比和空间分辨率取决于偏置电压,中子等效注量和角度。辐射和不同的设计变体,为传感器设计的最终选择提供输入。

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