A 60-GHz Integrated Radar Transmitter with Multiple Frequency Inputs and Digital Adjustable Gain in a 130-nm BiCMOS Technology

摘要

In this paper a 60 GHz monolithic transmitter for high precision based industrial radar systems is presented. The integrated transmitter has been designed using a 0.13 μm SiGe BiCMOS process from IHP (SG13G2) and includes multiplier, multiplexer, power amplifier and a digital interface. For testing, a PCB interface adapter is developed to control and supply the chip directly on the wafer prober. The integrated transmitter circuit has a size of 1800 μm x 1600 μm and a maximum power consumption of 148.5 mW from a 3.3 V power supply. The circuit provides four frequency inputs and multiplies them up to 60 GHz. The chip delivers a output power of 8 dBm at 60 GHz and min. 5 dBm over a frequency range from 55 to 65 GHz. The input path is switched and the output power is adjustable by a digital interface between -20 and 8 dBm at 60 GHz. This serial interface is realized in 0.13 μm CMOS logic and consists of a 15 bit shift register, decoder and and analog interface.