On-chip ZIM-BiC Laser

摘要

We present a novel type of silicon on-chip 1550-nm C-band erbium laser based on the 3D zero-index material of bound state in continuum or ZIM-BiC laser. The underlying lasing physics of the ZIM laser is the bound state in continuum or BiC of individual erbium-doped silicon pillar element for gain achievement and zero refractive indexes for inter-element phase coherence achievement. Theoretical analysis and numerical simulation have been performed. The results show that the carefully designed structure does realize both zero-index and bound state in the wavelength of interest. Behaviors of the ZIM-BiC laser are discussed.