Numerical analysis of the indium compositional variation on the efficiency droop of the GaN-based light-emitting diodes

摘要

We report numerical analysis of the four graded indium compositions and their influence on the optoelectronic performance is reported. We propose a wedge-shaped indium grading with a better optoelectronic performance in comparison to the other three structures. The proposed structure has significantly improved internal quantum efficiency, light output power and radiative recombination.