首页> 外文会议>SPIE Photonics Europe Conference >3,3'-Bicarbazole structural derivatives as charge transporting materials for use in OLED devices
【24h】

3,3'-Bicarbazole structural derivatives as charge transporting materials for use in OLED devices

机译:3,3'-联咔唑结构衍生物作为用于OLED器件的电荷传输材料

获取原文

摘要

In this study we report novel 3,3'-bicarbazole based charge transporting materials mainly designed for a use in systems containing phosphorescent iridium (Ⅲ) complex emitters. A low-cost oxidative coupling reaction using FeCl_3 was employed in the synthesis of 3,3'-bicarbazole compounds. Different derivatives of 3,3'-bicarbazole with 4-ethoxyphenyl-and ethyl- substituents at 9,9'- positions and (2,2-diphenylhydrazono)methyl- and 4-(dimethylamino)styryl- substituents at 6,6'- positions were synthesized. Obtained (2,2-diphenylhydrazono)methyl- derivatives exhibit glass transition temperatures that are sufficient for applications in electronic devices. Thin amorphous films of good optical quality can be produced from synthesized materials using spin-coating method. The effect of (2,2-diphenylhydrazono)methyl-substituents at 6,6'- and 4-ethoxyphenyl- substituents at 9,9'- positions on the charge transport properties of the 3,3'-bicarbazole derivatives was investigated. With the introduction of both electron acceptor and donor moieties to 3,3'-bicarbazole structure material electron and hole drift mobilities reach approximately 1·10~(-5) cm~2/V·s. Molecule ionization (I_f) levels and electron affinity (EA_f) levels in thin films were determined using photoelectric effect experiment. Depending on the nature of substituents at 6,6'- and 9,9'- positions I_f levels range from -5.19 to -5.13 eV and EA_f levels are from -2.44 to -2.38 eV.
机译:在这项研究中,我们报告了一种新颖的基于3,3'-联咔唑的电荷传输材料,该材料主要设计用于含磷光铱(Ⅲ)复合发射体的系统。使用FeCl_3的低成本氧化偶联反应被用于合成3,3'-联咔唑化合物。 3,3'-联咔唑的不同衍生物,在9,9'-位置具有4-乙氧基苯基-和乙基-取代基,在6,6'-具有(2,2-二苯基肼基)甲基-和4-(二甲基氨基)苯乙烯基-取代基合成位置。所获得的(2,2-二苯基肼基)甲基衍生物具有足以用于电子设备中的玻璃化转变温度。可以使用旋涂法由合成材料生产具有良好光学质量的非晶薄膜。研究了在6,6'-位的(2,2-二苯基肼基)甲基取代基和在9,9'-位的4-乙氧基苯基-取代基对3,3'-联咔唑衍生物的电荷传输性能的影响。在3,3'-联咔唑结构材料中引入电子受体基团和给体基团后,电子和空穴迁移率达到约1·10〜(-5)cm〜2 / V·s。使用光电效应实验确定薄膜中的分子电离(I_f)水平和电子亲和力(EA_f)水平。根据在6,6′-和9,9′-位的取代基的性质,I_f水平为-5.19至-5.13eV,EA_f水平为-2.44至-2.38eV。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号