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Numerical modeling of mode-locking stability and repetition rate transitions in monolithic multi-section semiconductor lasers

机译:单片多节半导体激光器中锁模稳定性和重复率跃迁的数值模型

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Passively mode-locked lasers are compact photonic sources delivering high-repetition rate (RR) pulse trains and picosecond short optical pulses. An excellent stability of the generated optical pulse train is crucially important towards their application in optical communications, optical sampling or as photonic clocks. Controlled RR transitions in a multi-section monolithic quantum-dot (QD) laser have been experimentally demonstrated by a reconfigurable absorber placement or a double-interval technique. In this contribution, we study the optical pulse train stability improvement and higher harmonic RR transitions in a monolithic semiconductor laser with interdigilal absorber placement by the simulation tool FreeTWM. The laser under investigation is 4 mm long, corresponding to a fundamental RR of 10 GHz, and consists of 2 gain and 2 absorber sections. All gain sections are biased with the same current density and the absorber sections are equally reverse biased. The total absorber lengths contribute with 10 % to the total cavity length. One absorber is placed at the high reflective facet, the second at 1/3 of the total cavity length with one gain section in between and the second gain section following the second absorber. Numerically transitions from fundamental mode-locking (n=1; 10 GHz) to higher harmonic mode-locking (n=3; 30 GHz) occur by increasing the injected current density using numerical continuation. Associated with that transition is an improved timing stability by a factor of 333. Simulations confirm experimental results obtained by timing stability and RR transition studies.
机译:无源锁模激光器是紧凑的光子源,可提供高重复频率(RR)脉冲序列和皮秒短光脉冲。产生的光脉冲序列的出色稳定性对其在光通信,光采样或光子钟中的应用至关重要。通过可重配置的吸收体放置或双间隔技术,实验证明了多节单片量子点(QD)激光器中的可控RR跃迁。在这项贡献中,我们通过仿真工具FreeTWM研究了带半光吸收器放置的单片半导体激光器中光脉冲串稳定性的提高和高次谐波RR跃迁。被研究的激光器长4 mm,对应于10 GHz的基本RR,由2个增益部分和2个吸收器部分组成。所有增益部分均以相同的电流密度偏置,而吸收器部分均被反向偏置。吸收体的总长度占腔体总长度的10%。一个吸收器放置在高反射面,第二个吸收器位于腔总长度的1/3处,一个增益部分位于第二反射器之后,第二个增益部分位于第二个吸收器之后。从数字锁模(n = 1; 10 GHz)到高次谐波锁模(n = 3; 30 GHz)的数值过渡是通过使用数值连续性增加注入电流密度来实现的。与该过渡相关的是将时序稳定性提高了333倍。仿真证实了通过时序稳定性和RR过渡研究获得的实验结果。

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