首页> 外文会议>SPIE Defense + Security Conference >Status of CdSiP_2 Development for Scaling Mid-Infrared Laser Power
【24h】

Status of CdSiP_2 Development for Scaling Mid-Infrared Laser Power

机译:缩放中红外激光功率的CdSiP_2开发现状

获取原文

摘要

Laser sources operating near a wavelength of four microns are important for a broad range of applications that require power scaling beyond the state-of-the-art. The highest power demonstrated in the spectral region from a solid-state laser source is based upon nonlinear optical (NLO) conversion using the NLO crystal ZnGeP_2 (ZGP). High-power operation in ZGP is known to be limited by thermal lensing. By comparing the figure of merit for thermal lensing in ZGP with other NLO crystal candidates, CdSiP_2 (CSP) particularly offers significant advantages. However as was the case with ZGP during its early development, the physics of observed crystal defects, and their relevance to power scaling, was not at first sufficiently understood to improve the crystal's characteristics as a NLO wavelength conversion element. During the past decade, significant progress has been made (1) with the first reported growth of a large CSP crystals, (2) in understanding the crystal's characteristics and its native defects, (3) in improving growth and processing techniques for producing large, low-loss crystals, and (4) in demonstrating CSP's potential for generating high-power mid-infrared laser light. The paper will summarize this progress.
机译:在波长范围为4微米的情况下工作的激光源对于要求功率范围超出现有技术水平的广泛应用非常重要。固态激光源在光谱区域显示出的最高功率基于使用NLO晶体ZnGeP_2(ZGP)的非线性光学(NLO)转换。众所周知,ZGP中的高功率操作受到热透镜的限制。通过将ZGP中热透镜的品质因数与其他NLO晶体候选物进行比较,CdSiP_2(CSP)特别提供了显着的优势。但是,与ZGP早期开发时的情况一样,起初还没有充分理解所观察到的晶体缺陷的物理性质及其与功率定标的关系,以改善晶体作为NLO波长转换元件的特性。在过去十年中,(1)首次报道了大型CSP晶体的生长,(2)在了解晶体的特性及其固有缺陷方面,(3)在改善生长和生产大尺寸的加工技术方面取得了重大进展。低损耗晶体,以及(4)展示了CSP产生高功率中红外激光的潜力。本文将总结这一进展。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号