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Magnetic Properties of Mn-based Heusler alloy films with Ru doping.

机译:Ru掺杂的Mn基Heusler合金薄膜的磁性能。

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摘要

Here we report a series of Mn-based Heusler alloy films with Ru doping grown on MgO substrate with Cr buffer layer using co-sputtering method from Ru and a series of MnxGe (x = 2, 2.2, 2.4, 2.5) targets. All the films were deposited at room temperature and annealed at 700 K. X-ray diffraction measurements were carried out using Singapore Synchrotron Light Source (SSLS). The magnetizations of the films were measured at room temperature using VSM. The results indicate that both residual magnetization (Mr) and saturation magnetization (MS) increase with Ru concentration increasing, while the coercivity (HC) becomes smaller. Our attempts provide alternative candidates for the Heusler alloys-based spintronic applications.
机译:在这里,我们报道了通过使用Ru和一系列Mn的共溅射方法,在具有Cr缓冲层的MgO衬底上生长的一系列Ru掺杂的Mn基Heusler合金膜。 x Ge(x = 2,2.2,2.4,2.5)目标。所有薄膜均在室温下沉积并在700 K退火。使用新加坡同步加速器光源(SSLS)进行X射线衍射测量。使用VSM在室温下测量薄膜的磁化强度。结果表明,随着Ru浓度的增加,剩余磁化强度(Mr)和饱和磁化强度(MS)均增加,而矫顽力(HC)变小。我们的尝试为基于Heusler合金的自旋电子学应用提供了替代选择。

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