Desaturation Detection for Paralleled GaN E-HEMT Phase Leg

摘要

As a promising next generation power switch, Gallium nitride (GaN) has a high power rating and broad application capabilities; however, the protection method on a GaN phase leg has recently become an urgent topic. This paper discusses shortcircuit protection on a paralleled GaN phase leg. It begins with a discussion on device static characterization and how desaturation detection can be transferred to a paralleled GaN phase leg. Desaturation detection implementation is then described, using a commercial gate driver IC. Lastly, the results of both the shortcircuit protection, and the Miller clamp test on a paralleled GaN phase leg, are presented.