First Experimental Confirmation of Ultralow Voltage Rectification by Super Steep Subthreshold Slope “PN-Body Tied SOI-FET” for High Efficiency RF Energy Harvesting and Ultralow Voltage Sensing

摘要

Rectification of the ultralow voltage signal, up to 10mV, was experimentally confirmed, for the first time, by our new device of the super steep subthreshold slope “PN-body Tied SOI-FET” (PNBT-FET). It comes from the surprisingly sharp turn-on characteristics of PNBT-FET, even with measuring on the ultra small voltage range. It is impossible with the conventional diodes, due to becoming the tangential line. Rectification up to 30 MHz was also confirmed with PNBT-FET. It is a good news for PNBT-FET because its conduction mechanism has the low speed concern. Those rectification demonstrations will be promising for small voltage rectification on RF energy harvesting and ultralow voltage sensing applications.