A 3-to-40V VIN10-to-50MHz 12W isolated GaN driver with self-excited tdeadminimizer achieving 0.2ns/0.3ns tdead, 7.9 minimum duty ratio and 50Vs CMTI

摘要

High-frequency (f_SW), wide-input (V_IN) power converters have gained increasing popularity in automotive applications due to the heightening demand for low profile, high power density and fast dynamic response [1]. To implement such converters, it is widely believed that Gallium Nitride (GaN) technology would replace conventional silicon technology in the future due to far-superior figures of merit (R_DSON×Q_G) [2,3]. Hence, there are urgent needs in developing compatible GaN driving techniques and circuits that enable high efficiency, high conversion ratio (CR) and high reliability power conversion at high f_SW. Among many challenges in accomplishing these goals, gate driver dead-time (t_dead) control and ground-interference isolation require the most immediate attention.