High linearity and high input impedance matching common gate CMOSLNA in 2.4GHz ISM band

摘要

A high linearity and low input reflection coefficient (<;-10 dB) common gate CMOS LNA has been fabricated in this paper using 0.13μm CMOS technology. The low noise amplifier is optimized for working in the 2.4 GHz frequency band range. The common gate topology with pi-matched input provides high IIP3 and best input matching characteristics. Advanced Design System (ADS) software is used for simulation. The fabricated LNA uses 1.2V supply voltage and it exhibits a linearity of 12 dBm, input reflection coefficient (S11) of -26.894 dB, reverse gain (S12) of -18.604 dB, noise figure of 3.513 dB, and gain of 7.526.