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Flashover inception voltage characteristic on polyimid surface under surge voltage application

机译:施加浪涌电压下聚酰亚胺表面的闪络起始电压特性

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To understand the flashover characteristics on polyimide (PI) surface, the flashover inception voltage under the surge application (Surge-FOIV) on the PI surface was measured in this paper. The FOIV under the DC voltage application (DC-FOIV) was also measured. The Surge-FOIV was higher than DC-FOIV. This is attributed to lower occurrence probability of an initial electron and/or lower growth probability of an electron avalanche under the surge application. In addition, the Sure-FOIV increased as both of half value width and repetitive frequency of the surge voltage waveform became bigger. It was considered that the surface charge injected from the electrode acted as home charge to the injection electrode, and the local electric field in the vicinity of the injection electrode relaxed. Furthermore, The Surge-FOIV also changed with the surge rate (surge/(dc+surge)) in dc voltage superimposed surge voltage. It was considered that the surface charge on the PI affect to the Surge-FOIV.
机译:为了了解聚酰亚胺(PI)表面的闪络特性,本文测量了PI表面电涌施加(Surge-FOIV)时的闪络起始电压。还测量了直流电压施加下的FOIV(DC-FOIV)。 Surge-FOIV高于DC-FOIV。这归因于在浪涌应用下初始电子的发生概率较低和/或电子雪崩的生长概率较低。另外,随着浪涌电压波形的半值宽度和重复频率都变大,Sure-FOIV增大。认为从电极注入的表面电荷充当注入电极的本地电荷,并且注入电极附近的局部电场松弛。此外,Surge-FOIV也随直流电压叠加浪涌电压的浪涌率(surge /(dc + surge))而变化。据认为,PI上的表面电荷会影响Surge-FOIV。

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